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Short process flowHJT cell process mainly includes four steps: pile making, amorphous silicon deposition, TCO deposition, screen printing, which is far less than PERC and TOPCon cells.
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LID FreeThe substrate of HJT cell is usually phosphorus-doped N-type mono silicon, and it is immune to LID effect without boron/oxygen recombination or boron-iron recombination.
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Good weak-light responseN-type mono silicon is used in HJT cells, and the power generation performance of N-type is 1% to 2% higher than that of P-type under the irradiation intensity of 600W/m2.
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High conversion efficiencyAt present, the mass production efficiency of HJT is generally above 24%. The conversion efficiency of superposed IBC and perovskite can be increased to more than 30% in the future.
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Low temperature coefficientThe power temperature coefficients of HJT cells are typically -0.25 to 0.2%/°C, lower than those of conventional and PERC cells.
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High double-sided ratioThe double-sided ratio of HJT can reach more than 90% (the highest can reach 98%); PERC bifacial has a double-sided ratio of only 75%+.
